Estudo do potencial de superfície sublimiar de MOSFETs
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Estudo do potencial de superfície sublimiar de MOSFETs

Estudo do potencial de superfície sublimiar de MOSFETs


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About the Book

Neste livro, o foco principal foi a modelagem e a influência das camadas de depleção em torno das regiões de fonte e dreno nas características sublimiares de um transistor MOS de canal curto com canal uniformemente dopado. Foi desenvolvido um modelo analítico para o potencial de superfície sublimiar num transístor MOS de canal curto, resolvendo a equação de Poisson pseduo-2D, formulada através da aplicação da lei de Gauss a uma caixa retangular no canal que cobre toda a profundidade da camada de depleção. O modelo foi capaz de prever uma maior influência das regiões de depleção da junção para um comprimento de canal menor e/ou tensões de polarização dreno/fonte mais elevadas devido a uma maior partilha de carga. O mesmo modelo é aplicado para encontrar o potencial de superfície sublimiar para MOSFETs de duplo halo. A diminuição da dimensão do dispositivo leva à redução da espessura do óxido de porta. Como resultado, o efeito indesejável de electrões quentes e a corrente de tunelamento da porta aumentam. Para ultrapassar este inconveniente, são utilizados materiais high-k em vez de dióxido de silício como material isolante por baixo da porta. Esta modelação revelar-se-á benéfica e contribuirá para futuros trabalhos de investigação.


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Product Details
  • ISBN-13: 9786206353171
  • Publisher: KS Omniscriptum Publishing
  • Binding: Paperback
  • Language: Portuguese
  • Returnable: N
  • Weight: 163 gr
  • ISBN-10: 6206353176
  • Publisher Date: 18 Aug 2023
  • Height: 229 mm
  • No of Pages: 68
  • Spine Width: 4 mm
  • Width: 152 mm


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