Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors

This volume contains the Proceedings of the NATO Advanced Research Workshop on "Growth and Optical Properties of Wide Gap II-VI Low Dimensional Semiconductors", held from 2 - 6 August 1988 in Regensburg, Federal Republic of Germany, under the auspices of the NATO International Scientific Exchange Programme. Semiconducting compounds formed by combining an element from column II of the periodic table with an element from column VI (so called II-VI Semiconductors) have long promised many optoelectronic devices operating in the visible region of the spectrum. However, these materials have encountered numerous problems including: large number of defects and difficulties in obtaining p- and n-type doping. Advances in new methods of material preparation may hold the key to unlocking the unfulfilled promises. During the workshop a full session was taken up covering the prospects for wide-gap II-VI Semiconductor devices, particularly light emitting ones. The growth of bulk materials was reviewed with the view of considering II-VI substrates for the novel epitaxial techniques such as MOCVD, MBE, ALE, MOMBE and ALE-MBE. The controlled introduction of impurities during non-equilibrium growth to provide control of the doping type and conductivity was emphasized.

Table of Contents:
1: Prospects And Considerations for Wide Gap II–VI Devices.- Optoelectronic Devices from Wide Band Gap II–VI Semiconductors.- Recent Development Trends in Thin Film Electroluminescent Displays.- Considerations for Blue-Green Optoelectronics Based on Epitaxial ZnSe/ZnS.- Blue Electroluminescent Devices Based on Low Resistive p-Type ZnSe.- Prospects for II–VI Heterojunction Light Emitting Diodes.- II–VI Heterostructures and Multi-Quantum Wells.- 2: 3D Growth of Wide-Gap II–VI Semiconductors.- A Review of the Growth of 3D II–VI Compounds.- The Growth of Thin Layers by MOCVD of Wide Band Gap II–VI Compounds.- Optical Studies of ZnXTE(X=Mn,Hg) Alloys.- Electrical and Structural Properties of Wide Bandgap II–VI Semiconducting Compounds.- 3: Excitons, Doping and Impurities in Wide Gap II–VI Semiconductors.- Some Aspects of Impurities in Wide Band II–VI Compounds.- Conductivity Control of Wide Gap II–VI Compounds.- Photoassisted Doping of II–VI Semiconductor Films.- Excitonic Complexes in Wide-Gap II–VI Semiconductors.- Optical Properties of Bulk II–VI Semiconductors: Effect of Shallow Donor States.- 4: Non-Linear Optical Properties of Wide Gap II–VI Semiconductors.- Review of Nonlinear Optical Processes in Wide Gap II–VI Compounds.- Optical Nonlinearities, Coherence and Dephasing in Wide Gap II–VI Semiconductors.- Frequency Dependence of Interband Two-Photon Absorption Mechanisms in ZnO and ZnS.- II–VI Semiconductor-Doped Glass: Nonlinear Optical Properties and Devices.- 5: 2D Growth of II–VI Semiconductors.- MBE and ALE of II–VI Compounds: Growth Processes and Lattice Strain in Heteroepitaxy.- Wide Bandgap II–VI Compound Superlattices Prepared by MBE and MOMBE.- II–VI/III–V Heterointerfaces: Epilayer-on-Epilayer Structures.-Growth of II–VI/III–V Mixed Heterostructures.- ZnSe Growth on Non-Polar Substrates by Molecular Beam Epitaxy.- Atomic Layer Epitaxy of ZnSe/ZnSxSe1-x Superlattices.- Growth of II–VI Semimagnetic Semiconductors by Molecular Beam Epitaxy.- 6: Optical Properties and Advanced Characterisation of 2D and 3D II–VI Semiconductors.- Exciton Self-Trapping in ZnSe/ZnTe Superlattice Structures.- Resonant Raman Scattering by LO Phonons in II–VI Compounds and Diluted Magnetic Semiconductors.- Resonance Raman Scattering in [111]-Oriented CdTe/CdMnTe Superlattices.- Magneto-Optical Absorption in II–VI Semiconductors: Application to CdTe.- Optically-Detected Magnetic Resonance of II–VI Compounds.- Acoustoelectric Characterization of Wide Gap II–VI Semiconductors in the Case of Bipolar Photoconduction.- 7: Other Wide-Gap Material.- Some Physical Properties of AgInS2 Films Obtained by Spray-Pyrolysis Technique.- Author Index.