Nanoscale Semiconductors
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Nanoscale Semiconductors: Materials, Devices and Circuits

Nanoscale Semiconductors: Materials, Devices and Circuits

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About the Book

This reference text discusses conduction mechanism, structure construction, operation, performance evaluation and applications of nanoscale semiconductor materials and devices in VLSI circuits design. The text explains nano materials, devices, analysis of its design parameters to meet the sub-nano-regime challenges for CMOS devices. It discusses important topics including memory design and testing, fin field-effect transistor (FinFET), tunnel field-effect transistor (TFET) for sensors design, carbon nanotube field-effect transistor (CNTFET) for memory design, nanowire and nanoribbons, nano devices based low-power-circuit design, and microelectromechanical systems (MEMS) design. The book discusses nanoscale semiconductor materials, device models, and circuit design covers nanoscale semiconductor device structures and modeling discusses novel nano-semiconductor devices such as FinFET, CNTFET, and Nanowire covers power dissipation and reduction techniques Discussing innovative nanoscale semiconductor device structures and modeling, this text will be useful for graduate students, and academic researchers in diverse areas such as electrical engineering, electronics and communication engineering, nanoscience, and nanotechnology. It covers nano devices based low-power-circuit design, nanoscale devices based digital VLSI circuits, and novel devices based analog VLSI circuits design.

Table of Contents:
Chapter 1: Tunneling FETs, the Non-Conventional Transistor basics, Chapter 2: Fundamentals of TFET and Its Applications, Chapter 3: Trends and Challenges in VLSI Fabrication Technology, Chapter 4: The Transition from MOSFET to MBCFET: Fabrication and Transfer Characteristics, Chapter 5: High Speed Nano Scale Interconnects, Chapter 6: Performance Review of Static Memory Cell based on CMOS, FinFET, CNTFET and GNRFET design, Chapter 7: Novel Subthreshold Modelling of FinFET based energy-effective circuit designs, Chapter 8: Noise Performance of IMPATT Diode oscillatorat Different mm-Wave Frequencies, Chapter 9: Testing of Semiconductor Scaled Devices, Chapter 10: Investigation of TFET for Mixed Signal and Hardware Security Applications, Chapter 11: Junctionless Transistors: Evolution and Prospects


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Product Details
  • ISBN-13: 9781032307541
  • Publisher: Taylor & Francis Ltd
  • Publisher Imprint: CRC Press
  • Height: 234 mm
  • No of Pages: 240
  • Weight: 589 gr
  • ISBN-10: 1032307544
  • Publisher Date: 30 Aug 2022
  • Binding: Hardback
  • Language: English
  • Sub Title: Materials, Devices and Circuits
  • Width: 156 mm


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