Nanoscaled Semiconductor-On-Insulator Structures and Devices

Introduction.- Nanoscaled SOI Material and Device Technologies.- Status and Trends in SOI nanodevices; F. Balestra.- Non-planar devices for nanoscale CMOS; M.C. Lemme et al.- High-k dielectric stacks for nanoscaled SOI devices; S. Hall et al.- Nanoscaled semiconductor heterostructures for CMOS transistors formed by ion implantation and hydrogen transfer; V. Popov et al.- Fluorine - Vacancy Engineering: A viable solution for dopant diffusion suppression in SOI substrates; H.A.W. El Mubarek, P. Ashburn.- Suspended Silicon-On-Insulator nanowires for the fabrication of quadruple gate MOSFETs; V. Passi et al.- Physics of Novel Nanoscaled SemOI Devices.- Integration of silicon Single-Electron Transistors operating at room temperature; T. Hiramoto.- SiGe nanodots in electro-optical SOI devices; A.V. Dvurechenskii et al.- Nanowire quantum effects in trigate SOI MOSFETs; J.-P. Colinge.- Semiconductor nanostructures and devices; J. Knoch, H. Lüth.- MugFET CMOS process with midgap gate material; W. Xiong et al.- Doping fluctuation effects in multiple-gate SOI MOSFETs; C.A. Colinge et al.- SiGeC HBTs: impact of C on device performance; I.Z. Mitrovic et al.- Reliability and Characterization of Nanoscaled SOI Devices.- Noise research of nanoscaled SOI devices; N. Lukyanchikova.- Electrical characterization and special properties of FINFET structures; T. Rudenko et al.- Substrate effect on the output conductance frequency response of SOI MOSFETs; V. Kilchytska et al.- Investigation of compressive strain effects induced by STI and ESL; S. Zaouia et al.- Charge trapping phenomena in single electron NVM SOI devices fabricated by a self-aligned quantum dot technology; A. Nazarov et al.- Theory and Modeling of Nanoscaled Devices.- Variability in nanoscale UTB SOI devices and its impact on circuits and systems; A. Asenov, K. Samsudin.- Electron transport in Silicon-On-Insulator nanodevices; F. Gamiz et al.- All quantum simulation of ultrathin SOIMOSFETs; A. Orlikovsky et al.- Resonant tunneling devices on SOI basis; B. Majkusiak.- Mobility modeling in SOI FETs for different substrate orientations and strain conditions; V. Sverdlov et al.- Three-dimensional (3-D) analytical modeling of the threshold voltage, DIBL and subthreshold swing of cylindrical GATE All Around MOSFETs; H.A. El Hamid et al. Authors Index.