Simulation of Semiconductor Processes and Devices 2007
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Simulation of Semiconductor Processes and Devices 2007

Simulation of Semiconductor Processes and Devices 2007


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Nanomanufacturing Technology and Opportunities Through Physically-Based Simulation.- Atomistic Modeling of Defect Diffusion in SiGe.- Diffusion and Deactivation of As in Si: Combining Atomistic and Continuum Simulation Approaches.- Molecular Dynamics Modeling of Octadecaborane Implantation into Si.- High Performance, Strained-Ge, Heterostructure p-MOSFETs.- Strain Induced Drain-Current Enhancement Mechanism in Short-Channel Bulk Ge-pMOSFETs with Different Channel and Surface Orientations.- Validation of the Effect of Full Stress Tensor in Hole Transport in Strained 65nm-Node pMOSFETs.- Modeling and Characterization of Advanced Phosphorus Ultra Shallow Junction Using Germanium and Carbon Coimplants.- Intrinsic Stress Build-Up During Volmer-Weber Crystal Growth.- Strain Energy Driven and Curvature Driven Grain Boundary Migration in 3D-IC Cu Vias.- Modeling of Re-Sputtering Induced Bridge of Tungsten Bit-Lines for NAND Flash Memory Cell with 37nm Node Technology.- Efficient Mask Design for Inverse Lithography Technology Based on 2D Discrete Cosine Transformation (DCT).- Modeling of Deep Reactive Ion Etching in a Three-Dimensional Simulation Environment.- Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs.- Surface Roughness Scattering in Ultrathin-Body SOI MOSFETs.- Pearson Effective Potential vs. Multi-Subband Monte-Carlo Simulation for Electron Transport in DG nMOSFETs.- Inclusion of the Pauli Principle in the Langevin-Boltzmann Equation for Bulk Systems.- Energy Conservation in Collisional Broadening.- A Simple Technique for the Monte Carlo Simulation of Transport in Quantum Wells.- Upcoming Challenges for Process Modeling.- Physics-Based Simulation of 1/f Noise in MOSFETs under Large-Signal Operation.- Thin Body Effects to Suppress Random Dopant Fluctuations in Nano-Scaled MOSFETs.- 'Atomistic' Mesh Generation for the Simulation of Semiconductor Devices.- Line Edge and Gate Interface Roughness Simulations of Advanced VLSI SOI-MOSFETs.- Impact of Shear Strain and Quantum Confinement on Channel nMOSFET with High-Stress CESL.- Analysis of Novel Stress Enhancement Effect Based on Damascene Gate Process with eSiGe S/D for pFETs.- Nonlinear Piezoresistance Effect in Devices with Stressed Etch Stop Liner.- 3D Stress, Process and Device Simulation: Extraction of the Relevant Stress Tensor.- Impact of Two-Step Recessed SiGe S/D Engineering for Advanced pMOSFETs of 32 nm Technology Node and Beyond.- Simulation Study of Multiple FIN FinFET Design for 32nm Technology Node and Beyond.- Device Design and Scalability of an Impact Ionization MOS Transistor with an Elevated Impact Ionization Region.- A Prototype Wafer Processing TCAD Tool Composed of BMD Simulation Module, Metal Gettering and Thermal Stress/Slip Functions for Scaled Device Design Phase.- Compact Modeling of Phase-Change Memories.- Modeling of NBTI Degradation for SiON pMOSFET.- Modeling Study of Ultra-Thin Ge Layers Using Tight-Binding, LCBB and kp Methods.- Analysis of Silicon Dioxide Interface Transition Region in MOS Structures.- Tunneling Properties of MOS Systems Based on High-k Oxides.- First-Principles Investigation on Oxide Trapping.- A Self-Consistent Simulation of InSb Double-Gate MOSFETs Using Full-Band Tight-Binding Approach.- Influence of Oxygen Composition and Carbon Impurity on Electronic Reliability of HfO2.- Upcoming Physics Challenges for Device Modeling.- Transient Characterization of Interface Traps in 4H-SiC MOSFETs.- Electro-Thermal, Transient, Mixed-Mode 2D Simulation Study of SiC Power Thyristors Operating Under Pulsed-Power Conditions.- Numerical Design Study on the Optimal p-Emitter Thickness of 4H-SiC Bipolar Diodes.- Study of Time-Periodic Avalanche Breakdown Occurring in VLD Edge Termination Structures.- Simulation of Magnetotransport in Hole Inversion Layers Based on Full Subbands.- Monte Carlo Study on Number of Scattering Events for Quasi-Ballistic Transport in MOSFETs.- Modeling of Macroscopic Transport Parameters in Inve


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Product Details
  • ISBN-13: 9783709119112
  • Publisher: Springer
  • Publisher Imprint: Springer
  • Edition: Softcover reprint of the original 1st ed. 2007
  • Language: English
  • Returnable: Y
  • Sub Title: Sispad 2007
  • Width: 170 mm
  • ISBN-10: 3709119111
  • Publisher Date: 30 Apr 2017
  • Binding: Paperback
  • Height: 244 mm
  • No of Pages: 463
  • Spine Width: 25 mm
  • Weight: 807 gr


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Simulation of Semiconductor Processes and Devices 2007
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