Tem-Analysen an Gruppe III-Nitrid Heterostrukturen - Bookswagon
Tem-Analysen an Gruppe III-Nitrid Heterostrukturen

Tem-Analysen an Gruppe III-Nitrid Heterostrukturen


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About the Book

Die hochauflosende Transmissionselektronenmikroskopie ist zur Analyse von Kristalldefekten in dunnen Schichten in besonderem Masse geeignet. Sie bietet die Moglichkeit, auftretende Defekte wie z.B. Versetzungen nach Typ, Verlauf und Dichte zu charakterisieren. Ausserdem ermoglicht ihre hohe Ortsauflosung in Kombination mit entsprechenden Auswerteverfahren eine exakte Ermittlung der chemischen Zusammensetzung in dunnen Filmen auf atomarer Skala. Im Rahmen der vorliegenden Arbeit wurde die hochauflosende Transmissionselektronenmikroskopie zur Analyse von GaN basierten Diodenstrukturen genutzt. Im Zentrum des Interesses stand zum einen die Untersuchung der Reduzierung der Versetzungsdichte mittels unterschiedlicher Herstellungsverfahren (ELOG/FACELO) und mittels in situ abgeschiedener SiNx-Zwischenschichten in LED- und Laserstrukturen. Den zweiten Schwerpunkt stellte die Bestimmung der lokalen Zusammensetzung der optisch aktiven InxGa1-xN-Quantentroge mit Hilfe des DALI-Verfahrens dar.


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Product Details
  • ISBN-13: 9783832511029
  • Publisher: Logos Verlag Berlin
  • Binding: Paperback
  • Height: 210 mm
  • No of Pages: 128
  • Series Title: Applied Electron Microskopy - Angewandte Elektronenmikroskop
  • Weight: 750 gr
  • ISBN-10: 3832511024
  • Publisher Date: 21 Dec 2005
  • Edition: Applied Electron Microskopy - Angewandte Elektrone
  • Language: German
  • Returnable: N
  • Spine Width: 0 mm
  • Width: 145 mm


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Tem-Analysen an Gruppe III-Nitrid Heterostrukturen
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