Untersuchungen diffusionsinduzierter Defekte in GaP und GaSb mittels Transmissionselektronenmikroskopie
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Untersuchungen diffusionsinduzierter Defekte in GaP und GaSb mittels Transmissionselektronenmikroskopie

Untersuchungen diffusionsinduzierter Defekte in GaP und GaSb mittels Transmissionselektronenmikroskopie


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About the Book

Inhaltsangabe: Einleitung: Die Verbindungshalbleiter GaP und GaSb finden wegen ihrer elektronischen Eigenschaften insbesondere Anwendung in der Opto- und Mikroelektronik. Um zu einem besseren Verständnis der zugrundeliegenden Mechanismen bei Zn-Diffusion in GaP und GaSb zu gelangen, haben wir Diffusionsexperimente durchgeführt. Die Diffusionsglühungen wurden an versetzungsfreien, intrinsischen GaP(001)- und GaSb(001)-Wafern in Quarzglasampullen unter verschiedenen Diffusionsbedingungen durchgeführt. Die Konzentrationsprofile wurden mittels Sekundärionenmassenspektroskopie und Elektronenmikrostrahlsonde bestimmt. Die durch die Zn-Diffusion entstehende Defektstruktur wurde mittels analytischer Transmissionselektronenmikroskopie an Querschnittsproben charakterisiert und die Oberflächen der Wafer mittels Rasterelektronenmikroskopie untersucht. Bei der Eindiffusion von Zn aus der Dampfphase kommt es zur Bildung stufenförmiger Konzentrationsprofile, welche durch eine hohe Zn-Oberflächenkonzentration und einen steilen Abfall des Zn-Gehalts an der Diffusionsfront gekennzeichnet sind. In n-dotierten Substraten können damit abrupte p-n-Übergänge durch Zn-Diffusion erzeugt werden. Die bei der Zn-Diffusion entstehenden Gitterbaufehler spielen hinsichtlich der industriellen Anwendung der Materialien insofern eine Rolle, als sie zu Störungen im periodischen Gitterpotential und lokalisierten Energieniveaus führen. Die Beweglichkeit der freien Ladungsträger wird damit sehr stark durch die strukturelle Fehlordnung beeinflußt, welches sich insbesondere auf die Funktiontüchtigkeit von p-n-Übergängen in elektronischen Bauelementen auswirkt. In GaP-Leuchtdioden führt die strukturelle Fehlordnung z.B. zu starker Reduzierung der Lumineszenz. Inhaltsverzeichnis: Inhaltsverzeichnis: 1.Einleitung3 2.Grundlagen der Diffusionstheorie6 2.1Mikroskopische Beschreibung6 2.2Makroskopische Beschreibung7 2.2.1Herleitung der Diffusionsgleichung7 2.2.2Dissoziativer Mechanismus8 2.2.3Kick-Out-


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Product Details
  • ISBN-13: 9783838611846
  • Publisher: Diplom.de
  • Binding: Paperback
  • Language: German
  • Returnable: N
  • Spine Width: 7 mm
  • Width: 148 mm
  • ISBN-10: 3838611845
  • Publisher Date: 23 Nov 1998
  • Height: 210 mm
  • No of Pages: 108
  • Series Title: German
  • Weight: 199 gr


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Untersuchungen diffusionsinduzierter Defekte in GaP und GaSb mittels Transmissionselektronenmikroskopie
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