Versetzungsreduzierte AIN- und AIGaNSchichten als Basis fur UV LEDs
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Versetzungsreduzierte AIN- und AIGaNSchichten als Basis fur UV LEDs

Versetzungsreduzierte AIN- und AIGaNSchichten als Basis fur UV LEDs


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About the Book

Im Rahmen dieser Dissertation wurden AlN und AlGaN als UV-transparente Basisschichten mittels metallorganischer Gasphasenepitaxie auf c-planaren Saphirsubstraten abgeschieden. Eine Reduktion der Versetzungsdichte und der Verspannung in diesem Material ist entscheidend fur die Anwendung als Basisschichten fur lichtemittierende Bauelemente – und damit die Grundlage fur effiziente UV-LEDs. Zunachst wurde glattes und versetzungsreduziertes AlN auf Saphir reproduzierbar abgeschieden. Mit einer Optimierung der Wachstumsbedingungen konnte die Schraubenversetzungsdichte in den AlN-Schichten signifikant reduziert werden. Allerdings wird dadurch eine Prozessinstabilitat verursacht, die zu einer Rauigkeit fuhren kann. Dies lasst sich durch die Existenz von Inversionsdomanen erklaren. Mit einem optimierten Desorptionsprozess konnten reproduzierbar glatte AlN/Saphir-Schichten als Grundlage fur alle folgenden Untersuchungen hergestellt werden. Da die Stufenversetzungsdichte in diesen Schichten noch zu hoch ist, um effiziente LEDs zu realisieren, wurde der Ansatz des epitaktischen lateralen Uberwachsens mit AlN verfolgt. Mittels dieser Methode wurde eine Versetzungsreduktion um mehr als eine Großenordnung erreicht, die mit verschiedenen Charakterisierungsmetho-den verifiziert wurde. Zudem konnten der Einfluss verschiedener Wachstumsparameter auf das Lateralwachstum von AlN bestimmt und verschiedene Motive und deren Auswirkungen auf das Koaleszenzverhalten untersucht werden. Dabei konnten verbesserte Eigenschaften von UV-LED Hetero-strukturen nachgewiesen und die Eignung der Schichten als Basis fur UV-B LEDs verifiziert werden. Fur die Entwicklung von UV-C LEDs konnten auf den entwickelten Templates n-leitfahige AlGaN-Schichten mit einem Al-Gehalt von uber 77 % realisiert und eine Steigerung der internen Quanteneffizienz von AlGaN-Quantenfilmen erreicht werden. Diese Ergebnisse legen die Grundlage fur die Realisierung von kurzwelligen UV-C LEDs mit Emissions-wellenlangen unter 250 nm.


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Product Details
  • ISBN-13: 9783954047413
  • Publisher: Na
  • Height: 210 mm
  • Weight: 9 gr
  • ISBN-10: 3954047411
  • Binding: Paperback
  • Language: German
  • Width: 220 mm


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